Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/15518
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dc.titleNiSi thin film fabrication by pulsed laser deposition
dc.contributor.authorZANG HUI
dc.date.accessioned2010-04-08T10:54:25Z
dc.date.available2010-04-08T10:54:25Z
dc.date.issued2006-08-17
dc.identifier.citationZANG HUI (2006-08-17). NiSi thin film fabrication by pulsed laser deposition. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/15518
dc.description.abstractIn this thesis, we report NiSi film fabrication by the application of Pulsed Laser Deposition (PLD) using Ni and Si targets with the proportion of 1:1. This technique minimizes Si consumption from Si wafer substrate. After annealing, the thin film characteristics of the NiSi thin films was investigated using Micro-Raman spectroscopy (I?RS), X-Ray Diffraction (XRD), and Atomic Force Microscopy (AFM). Phase identification was carried out by I?RS and XRD. XRD also shows that NiSi thin film prepared with Ni/Si target possessed of preferred orientation of NiSii??001i??on Si (001) substrate. The texture properties of the thin films were strongly affected by annealing temperature and the Ni/Si ratio of as-deposited samples. AFM also shows that the NiSi thin films prepared by Ni/Si target gave smoother surface compared to those prepared by pure Ni target.
dc.language.isoen
dc.subjectpulsed laser deposition
dc.typeThesis
dc.contributor.departmentPHYSICS
dc.contributor.supervisorSHEN ZEXIANG
dc.description.degreeMaster's
dc.description.degreeconferredMASTER OF SCIENCE
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Master's Theses (Open)

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