Please use this identifier to cite or link to this item:
Title: NiSi thin film fabrication by pulsed laser deposition
Authors: ZANG HUI
Keywords: pulsed laser deposition
Issue Date: 17-Aug-2006
Citation: ZANG HUI (2006-08-17). NiSi thin film fabrication by pulsed laser deposition. ScholarBank@NUS Repository.
Abstract: In this thesis, we report NiSi film fabrication by the application of Pulsed Laser Deposition (PLD) using Ni and Si targets with the proportion of 1:1. This technique minimizes Si consumption from Si wafer substrate. After annealing, the thin film characteristics of the NiSi thin films was investigated using Micro-Raman spectroscopy (I?RS), X-Ray Diffraction (XRD), and Atomic Force Microscopy (AFM). Phase identification was carried out by I?RS and XRD. XRD also shows that NiSi thin film prepared with Ni/Si target possessed of preferred orientation of NiSii??001i??on Si (001) substrate. The texture properties of the thin films were strongly affected by annealing temperature and the Ni/Si ratio of as-deposited samples. AFM also shows that the NiSi thin films prepared by Ni/Si target gave smoother surface compared to those prepared by pure Ni target.
Appears in Collections:Master's Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Thesis-Zang Hui-final.pdf1.17 MBAdobe PDF



Page view(s)

checked on Apr 20, 2019


checked on Apr 20, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.