Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/28/36/365002
Title: Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation
Authors: Whitcher, TJ 
Wong, WS
Talik, AN
Woon, KL
Chanlek, N
Nakajima, H
Saisopa, T
Songsiriritthigul, P
Issue Date: 14-Sep-2016
Publisher: IOP Publishing
Citation: Whitcher, TJ, Wong, WS, Talik, AN, Woon, KL, Chanlek, N, Nakajima, H, Saisopa, T, Songsiriritthigul, P (2016-09-14). Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation. Journal of Physics: Condensed Matter 28 (36) : 365002-365002. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/28/36/365002
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Source Title: Journal of Physics: Condensed Matter
URI: https://scholarbank.nus.edu.sg/handle/10635/155060
ISSN: 09538984
1361648X
DOI: 10.1088/0953-8984/28/36/365002
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Appears in Collections:Staff Publications
Elements

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation.pdfPublished version1.8 MBAdobe PDF

CLOSED

None

Google ScholarTM

Check

Altmetric


This item is licensed under a Creative Commons License Creative Commons