Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.solmat.2018.05.059
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dc.titlemonoPoly (TM) cells: Large-area crystalline silicon solar cells with fire-through screen printed contact to doped polysilicon surfaces
dc.contributor.authorDuttagupta, Shubham
dc.contributor.authorNandakumar, Naomi
dc.contributor.authorPadhamnath, Pradeep
dc.contributor.authorBuatis, Jamaal Kitz
dc.contributor.authorStangl, Rolf
dc.contributor.authorAberle, Armin G
dc.date.accessioned2019-06-03T04:29:07Z
dc.date.available2019-06-03T04:29:07Z
dc.date.issued2018-12-01
dc.identifier.citationDuttagupta, Shubham, Nandakumar, Naomi, Padhamnath, Pradeep, Buatis, Jamaal Kitz, Stangl, Rolf, Aberle, Armin G (2018-12-01). monoPoly (TM) cells: Large-area crystalline silicon solar cells with fire-through screen printed contact to doped polysilicon surfaces. SOLAR ENERGY MATERIALS AND SOLAR CELLS 187 : 76-81. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2018.05.059
dc.identifier.issn0927-0248
dc.identifier.issn1879-3398
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/155034
dc.description.abstract© 2018 Elsevier B.V. Successful integration of carrier selective contacts (so-called passivated contacts) in p-type and n-type front-and-back contact (FAB) silicon solar cells could lift cell efficiencies to above 24% in mass production. In this work, we introduce one of SERIS’ monoPoly FAB cell structures, which features the monofacial (single-sided) application of a polysilicon (poly-Si) layer. Using industrial tools, doped poly-Si on an ultrathin interface oxide is shown to provide extremely low recombination current density of 4 fA/cm2 and implied open-circuit voltage of about 745 mV that are able to withstand the high-temperature firing process of screen-printed metal contacts. The interface oxide and the doping concentration of the poly-Si film are of great importance for the surface passivation quality and the transport of majority carriers, especially for fire-through screen-printed contacts as used in this work. Our initial pilot-line results show a very promising cell efficiency of 21.4% on large-area (244.3 cm2) n-type monocrystalline wafers with screen-printed and fire-through metal contacts on both sides. A roadmap for nFAB monoPoly cells towards 24% efficiency is presented on the basis of an optimisation of the device architecture and various processing steps.
dc.language.isoen
dc.publisherELSEVIER SCIENCE BV
dc.sourceElements
dc.subjectScience & Technology
dc.subjectTechnology
dc.subjectPhysical Sciences
dc.subjectEnergy & Fuels
dc.subjectMaterials Science, Multidisciplinary
dc.subjectPhysics, Applied
dc.subjectMaterials Science
dc.subjectPhysics
dc.subjectSI
dc.subjectPASSIVATION
dc.subjectEFFICIENCY
dc.typeArticle
dc.date.updated2019-06-03T01:31:53Z
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1016/j.solmat.2018.05.059
dc.description.sourcetitleSOLAR ENERGY MATERIALS AND SOLAR CELLS
dc.description.volume187
dc.description.page76-81
dc.published.statePublished
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