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|Title:||Characterization and modeling of MOSFETS for RF applications||Authors:||MAHALINGAM UMASHANKAR||Keywords:||MOSFET, three-port, RF characterization, RF modeling, capacitance, terminal charge||Issue Date:||29-May-2006||Citation:||MAHALINGAM UMASHANKAR (2006-05-29). Characterization and modeling of MOSFETS for RF applications. ScholarBank@NUS Repository.||Abstract:||Concomitant with a lack of reliable pure-mode multi-port measurement techniques, the conventional characterization of a MOSFET for RF device modeling has been carried out in its incomplete two-port form. This description fails to capture the body bias effect, substrate signal coupling at RF and thus, affects the accuracy of RF MOS models. This thesis reports the complete three-port characterization of a MOSFET valid up to 15GHz in all regions of operation, from two-port S-parameter measurements. The approach is to obtain accurate two-port Y-parameters in three different configurations and appropriately assemble them to generate three-port data. This necessitated the characterization and de-embedding of the GPG probea??s (used at the un-calibrated third port for providing DC bias) parasitic impedance. For this purpose, a general RF small-signal equivalent circuit and model-based parameter extraction scheme are developed for the MOSFET, using physical parameters extracted from a novel test structure (SD-R). The bias and frequency dependent terminal charges a??essential for circuit simulators- extracted from measured three-port capacitances are reported here for the first time.||URI:||http://scholarbank.nus.edu.sg/handle/10635/15426|
|Appears in Collections:||Master's Theses (Open)|
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