Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/154057
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dc.titleCHARACTERIZATION OF POWERMOSFET
dc.contributor.authorSOO HAW YUN
dc.date.accessioned2019-05-13T07:56:31Z
dc.date.available2019-05-13T07:56:31Z
dc.date.issued2007
dc.identifier.citationSOO HAW YUN (2007). CHARACTERIZATION OF POWERMOSFET. ScholarBank@NUS Repository.
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/154057
dc.description.abstractThe process integration team deals with customer engineers, customers, process engineers, and suppliers to coordinate and manage technology transfers or new products. Their work involves a lot of planning, meeting schedules and solving performance and process issues. This particular project involves process development of a power Mosfet technology (trench Mosfet) for production in Chartered. This report summarizes the characterization efforts performed throughout the development process.
dc.sourceSMA BATCHLOAD 20190422
dc.subjectPowermosfet
dc.subjectpolysilicon void
dc.subjecttrench mosfet
dc.subjectcharacterization
dc.typeThesis
dc.contributor.departmentSINGAPORE-MIT ALLIANCE
dc.contributor.supervisorGAN CHEE LIP
dc.contributor.supervisorTEO YEOW MENG
dc.contributor.supervisorKIM HUNG JIN
dc.description.degreeMaster's
dc.description.degreeconferredMASTER OF SCIENCE IN ADVANCED MATERIALS FOR MICRO- & NANO- SYSTEMS
dc.description.otherDissertation Supervisors: 1. Assistant Professor Gan Chee Lip, NTU. 2. Mr. Teo Yeow Meng, Chartered. 3. Mr. Kim Hung Jin, Chartered
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