Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/153976
Title: INVESTIGATION ON IDDQ FAILURES
Authors: JONATHAN LIM TZE MING
Keywords: IDDQ
leakage current
CMOS
NMOS
submicron
short-channel effect
dislocation
ion implantation
amorphization
recrystallization
Issue Date: 2006
Citation: JONATHAN LIM TZE MING (2006). INVESTIGATION ON IDDQ FAILURES. ScholarBank@NUS Repository.
Abstract: IDDQ testing is an integrated circuit (IC) test technique that is based on measuring steady state power-supply current, otherwise known as the quiescent power-supply current (IDDQ), from which this test method derives its name. This test technique has been proven to be a highly sensitive yet cost-effective test method and is currently adopted by most semiconductor manufacturers as part of their standard IC reliability test procedure. This report presents the work that was carried out in studying and identifying possible root cause(s) implicating the IDDQ test failures of two particular semiconductor lots. Methods to prevent future reoccurrences of such test failures are also suggested. Finally, various leakage current mechanisms are investigated and discussed.
URI: https://scholarbank.nus.edu.sg/handle/10635/153976
Appears in Collections:Master's Theses (Restricted)

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