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Title: Study of novel aspects of Ni-based silicides for ULSI devices
Keywords: Nickel silicides (NiaSib), Nickel germanides [Niu(Si1-xGex)v], prolonged annealing, reaction kinetics, morphological stability, oxygen contamination
Issue Date: 24-Jul-2006
Citation: MD. ANISUR RAHMAN (2006-07-24). Study of novel aspects of Ni-based silicides for ULSI devices. ScholarBank@NUS Repository.
Abstract: NiSi and NiSi1-xGex are indispensable materials for as contact formation in future CMOS devices. In order to implement NiSi and NiSi1-xGex several key challenges need to be met: improved phase and morphological stability, controlling of oxygen contamination, and a better understanding of the phase formation and reaction kinetics at low temperatures A#300oC. This thesis investigates several key novel features of solid state reactions of Ni/ Si(100), Ni/ Si1-xGex and Ni(Pt)/ Si1-xGex thin films at various annealing temperatures ranging from 200oC to 800oC for both RTP and prolonged furnace annealing and several interesting phenomena are observed: (1) NiSi stable upto 4h annealing beyond that severe agglomeration sets in at 500oC, (2) at 200oC Ni3Si2 + Ni31Si12 forms and a new kind of reaction kinetics discovered, (3) dramatic oxidation reduction in NiSi1-xGex by incorporation of 10% Pt in Ni.
Appears in Collections:Master's Theses (Open)

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