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Title: Die-to-Die Interconnect Studies using Copper Pillars with Tin-Silver Solder Bumps
Keywords: Copper pillar bumps
oven reflow (attach and reflow)
local reflow (thermocompression)
no-clean flux
Issue Date: 2010
Citation: DAVID ALLEN WONG (2010). Die-to-Die Interconnect Studies using Copper Pillars with Tin-Silver Solder Bumps. ScholarBank@NUS Repository.
Abstract: Three primary factors are driving the adoption of 3D ICs and associated packaging technologies: increased functionality, size shrinks, and lower costs. The implementation of 3D packaging with 3D through silicon vias (TSV) is no longer speculative; it is imminent. In this study, Cu pillar bump with SnAg are investigated as one of the promising fine pitch interconnections. The alignment between the top and bottom bump interconnects are studied via two bonding methods: 1. attach and reflow (oven reflow) and 2. thermocompression (local reflow). Scanning electron microscope (SEM) and electron dispersive X-ray (EDX) are used to study the intermetallic compound and Kirkendall void growth in Cu pillar bumps. Using no-clean flux and a flux reservoir produced bonded dies with high yields in both alignment and electric probing. Attach and reflow (oven reflow) samples showed the most promising and reproducible results. Further reliability studies should be carried out on these devices to study their long term stability and IMC growth.
Appears in Collections:Master's Theses (Restricted)

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