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|Title:||Development in Chemical Staining Recipes (RIE) for High-resolution Scanning Electron Microscope (SEM) Analysis Techniques||Authors:||ANAY CHAUBE||Issue Date:||2008||Citation:||ANAY CHAUBE (2008). Development in Chemical Staining Recipes (RIE) for High-resolution Scanning Electron Microscope (SEM) Analysis Techniques. ScholarBank@NUS Repository.||Abstract:||SEM is an important and effective tool for the failure analysis of semiconductor devices. In the modern VLSI, the increased circuit complexity is presenting challenges in precisely resolving nanoscale features in devices. The accurate delineation of these nanosized features is strongly dependent on the staining methodologies, which provides necessary contrast for SEM imaging. Therefore, this IA project is aimed to develop new chemical staining processes/recipes, and to perform high-resolution SEM/EDX analysis of the most advanced electronic devices such as for 45- 65 nm technologies. The feature in focus here is the all powering transistor, consisting simply of a poly-silicon, silicon oxide and silicon nitride. SEM imaging as a way to capture these dimensions is ineffective due to the lack of contrast mechanism to give high quality imaging. TEM analysis is an effective way to ascertain these dimensions, however TEM analysis requires rigorous sample preparation, which is extremely time consuming and will slows down analysis operations. If an effective way to achieve sufficient contrast for SEM analysis can be achieved, between the materials of the transistor; considerable time saving and hence cost saving can be achieved. The idea proposed and experimented in this project, deals with using chemical staining to provide this contrast. Chemical staining being a etching technique where different materials are etched at vastly different rates, so as to enable imaging due to the topographical contrast. Chemical staining is highly dependent on etch chemistries of chosen etchants and can be by nature, either wet etching or dry etching. This project investigates one such etching system using primarily fluorine based chemistry in the form of SF6 and CF4 to obtain desired etch selectivity and concurrent topographical contrast for SEM imaging.||URI:||https://scholarbank.nus.edu.sg/handle/10635/153884|
|Appears in Collections:||Master's Theses (Restricted)|
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