Please use this identifier to cite or link to this item:
Title: Interfaces at crystalline metal gate/high-k oxide/Si stacks: Characterizations and atomistic modeling
Keywords: high-k dielectric, metal gate, x-ray photoemission spectroscopy, transmission electron microscopy, first-principles calculations
Issue Date: 19-Jul-2006
Citation: DONG YUFENG (2006-07-19). Interfaces at crystalline metal gate/high-k oxide/Si stacks: Characterizations and atomistic modeling. ScholarBank@NUS Repository.
Abstract: Characteristics of interfaces at crystalline metal/high-k oxide/silicon stacks have been studied by combined methods of x-ray photoemission spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and first-principles calculations based on density functional theory (DFT).The epitaxial ZrO2/Si (001) interface structure grown by pulsed laser deposition (PLD) was determined using HRTEM. The interface band alignment at the epitaxial ZrO2/Si interface was accurately measured by XPS. Meanwhile, various interface structures based on the HRTEM images have been studied by first-principles calculations.For the metal gate/high-k oxide interface, the effective work functions (WF) of metal gate were found to be tunable by controlling the interface structures or chemical species. The results provide a practical way of modifying the band alignments for metal gate/high-k oxide interfaces to satisfy the engineering requirement for the metal gate technology.
Appears in Collections:Ph.D Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
PhD-thesis-DongYF.pdf4.27 MBAdobe PDF



Page view(s)

checked on Apr 26, 2019


checked on Apr 26, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.