Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/153672
Title: EBAC DEVELOPMENT IN NANO-PROBER FOR RESISTIVE CONTACT/VIA ISOLATION IN ADVANCED 45NM/32NM MICROPROCESSORS
Authors: CHEN YALIANG
Keywords: EBAC
Absorbed Current
Failure Analysis
Fault Location
Nano-Probe
SEM
resistive open
short
Issue Date: 2009
Citation: CHEN YALIANG (2009). EBAC DEVELOPMENT IN NANO-PROBER FOR RESISTIVE CONTACT/VIA ISOLATION IN ADVANCED 45NM/32NM MICROPROCESSORS. ScholarBank@NUS Repository.
Abstract: Scan chain analysis has become more challenging as the microprocessor node dimension scales down to 45nm / 32nm and the number of metal interconnect layers increases. Electron Beam Absorbed Current (EBAC) technique is based on Scanning Electron Microscopy (SEM) and uses current absorbed by specimen from the primary electron beam to generate a current (later on converted to voltage) contrast map. From the intensity variation on the current (or voltage) contrast map, several types of faults can be located and analyzed, such as open, highly resistive or short faults in multi-layer metal interconnects, vias or contacts. With nano-probes installed in SEM, the performance of EBAC can be greatly enhanced. In this report, EBAC technique has been conceptually demonstrated on a normal SEM without nano-probes (Philips XL30), and later on a SEM with nano-probes (Zeiss Supra 40). With nano-probes, faults in three metal layers beneath the passivation surface have been observed. It is found that different electron beam energies result in different observations and contrast in metal lines at different layers. Methods of improving the signal-to-noise (SNR) ratio and resolution of EBAC signals have also been discussed.
URI: https://scholarbank.nus.edu.sg/handle/10635/153672
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