Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41598-018-32149-z
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dc.titleOrigin of relationship between ferromagnetic response and damage in stretched systems
dc.contributor.authorMerabtine S.
dc.contributor.authorZighem F.
dc.contributor.authorGarcia-Sanchez A.
dc.contributor.authorGunasekaran V.
dc.contributor.authorBelmeguenai M.
dc.contributor.authorZhou X.(student)
dc.contributor.authorLupo P.
dc.contributor.authorAdeyeye A.O.
dc.contributor.authorFaurie D.
dc.date.accessioned2019-03-05T01:25:46Z
dc.date.available2019-03-05T01:25:46Z
dc.date.issued2018
dc.identifier.citationMerabtine S., Zighem F., Garcia-Sanchez A., Gunasekaran V., Belmeguenai M., Zhou X.(student), Lupo P., Adeyeye A.O., Faurie D. (2018). Origin of relationship between ferromagnetic response and damage in stretched systems. Scientific Reports 8 (1) : 13695. ScholarBank@NUS Repository. https://doi.org/10.1038/s41598-018-32149-z
dc.identifier.issn20452322
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/151964
dc.description.abstractThis article presents a study whose purpose is to elucidate the damage effects in thin films on their magnetic response. Co40Fe40B20 and Ni80Fe20 films of different nanometric thicknesses were stretched by more than 10% and in situ probed by atomic force microscopy measurements to determine their irreversible mechanical behavior (multi-cracking, buckling). Once these phenomena have been well identified, magnetic behavior of these stretched systems has been studied by ferromagnetic resonance to measure resulting magnetic anisotropy and damping evolutions. All of these experimental studies show that the magnetic properties are mainly affected by the stresses generated during the damage but not by the local discontinuities induced by the numerous cracks and buckles. This is in particular confirmed by the almost zero sensitivity to the damage of the magnetic properties of Ni80Fe20 alloy which is known for its vanishing magnetostriction. © 2018, The Author(s).
dc.publisherNature Publishing Group
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.description.doi10.1038/s41598-018-32149-z
dc.description.sourcetitleScientific Reports
dc.description.volume8
dc.description.issue1
dc.description.page13695
dc.published.statepublished
dc.grant.idANR-11-IDEX-0005-02
dc.grant.id2016-04-R/USPC-NUS
dc.grant.fundingagencyUSPC-NUS program
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