Please use this identifier to cite or link to this item:
Title: Metal contacts to P-type gallium nitride
Keywords: p-GaN, contact, surface treatment, plasma treatment, O2 annealing, N2 annealing
Issue Date: 20-Jan-2006
Citation: LIM WOON CHI, JANIS (2006-01-20). Metal contacts to P-type gallium nitride. ScholarBank@NUS Repository.
Abstract: AQ, Cl2/N2 plasma and O2 plasma treatments on the Ni/Au (20/20 nm) contact to p-GaN are found to result in similar I-V characteristics, attributed to the similar Ga/N and O/Ga ratios obtained. O2 annealing was observed to be better than N2 annealing only for AQ surface treatment due to formation of Ni3N compounds for the Cl2/N2 plasma-treated samples and N-Ga-Ox and Ga-Ox-C complexes during O2 plasma treatment.Both N2 and O2 annealings are seen to be unlikely to improve the electrical characteristics of the Rh (10 nm) and Rh/Au (10/10 nm) contacts. O2 annealing improves only the Rh/Ni (10/10 nm) and Rh/Ni/Au (10/10/10 nm) contacts while N2 annealing is generally unable to improve Rh-based contacts to p-GaN. NiO formation and some in-diffusion of it to the GaN surface is observed for the O2-annealed Rh/Ni contact, showing similarity to the O2-annealed Ni/Au contact except that Rh-gallides formed result in a Ga-deficient GaN surface and consequently, good contact to p-GaN.
Appears in Collections:Master's Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
M.ENG. THESIS - Lim Woon Chi Janis.pdf3.7 MBAdobe PDF



Page view(s)

checked on Apr 19, 2019


checked on Apr 19, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.