Selected topics on advanced electron devices and their circuit applications

Abstract

Selected topics on advanced modern electron devices have been studied in this thesis, including both active devices and passive devices.I part I, a systematic study of Negative Bias Temperature Instability (NBTI) in p-MOSFETs with ultra-thin SiON gate dielectric is reported. By using the fast pulsed method, a fast Dynamic NBTI (DNBTI) component is distinguished from the conventional slow one for the first time. Evidence has been shown that this component is due to trapping and de-trapping of hole traps Not in SiON. A model describing the phenomenon has been developed and the simulation results are in excellent agreement with all the experiments. The impact of fast DNBTI on device lifetime and circuit applications has been re-evaluated in the light of this new finding.In part II, researches have been done on proton implanted high quality inductor as well as high-I? MIM capacitor, showing promising characteristics for future ULSI application.