Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/150326
Title: FERROELECTRIC RESISTIVE SWITCHING BEHAVIOR IN LEAD-FREE THIN FILMS
Authors: YOONG HERNG YAU
Keywords: Ferroelectricity, Resistive Switching, Lead-Free, Thin Film, BiFeO3, Hf0.5Zr0.5O2
Issue Date: 31-Jul-2018
Citation: YOONG HERNG YAU (2018-07-31). FERROELECTRIC RESISTIVE SWITCHING BEHAVIOR IN LEAD-FREE THIN FILMS. ScholarBank@NUS Repository.
Abstract: Ferroelectric materials are promising candidates in non-volatile memory applications. The ferroelectric resistive switching behavior exhibited in ferroelectric thin films is especially of great research interest. In this thesis, the ferroelectric resistive switching behavior of two important lead-free materials, BiFeO3 (BFO) and Hf0.5Zr0.5O2 (HZO). First, the growth of unit cell thickness BFO based ferroelectric tunneling junctions (FTJ) with good ferroelectricity and their ferroelectric resistive switching behavior are investigated. The ferroelectric origin of such ultrathin BFO thin films and their applications in ultrathin FTJs are discussed in the following chapter. Additionally, the ferroelectricity of epitaxial binary oxide HZO thin films, which are highly compatible with the current semiconductor technology, and their applications in memristors and neuromorphic computing are also examined. This work extends the applicability of high quality lead-free ferroelectric thin films in next generation nonvolatile memory devices as well as in artificial electronic synaptic devices.
URI: http://scholarbank.nus.edu.sg/handle/10635/150326
Appears in Collections:Ph.D Theses (Open)

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