Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/150324
Title: ULTRA-THIN ALUMINIUM OXIDE TUNNEL LAYER PASSIVATED CONTACT FOR HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELLS
Authors: XIN ZHENG
Keywords: Silicon solar cell, Hole-selective contact, Atomic layer deposition, Ultra-thin aluminium oxide, Stability, Interface properties extraction
Issue Date: 20-Aug-2018
Citation: XIN ZHENG (2018-08-20). ULTRA-THIN ALUMINIUM OXIDE TUNNEL LAYER PASSIVATED CONTACT FOR HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELLS. ScholarBank@NUS Repository.
Abstract: In order to boost the conversion efficiency of silicon solar cells, it is important to well evaluate and improve the surface passivation for both metalized and non-metalized areas. To passivate the metalized region, tunnel layer passivated contacts have been proposed. However, so far hole-selective contacts need further optimizations. This thesis first proposes an improved methodology to extract interface properties of dielectric layer passivated silicon wafers. Subsequently, atomic-layer-deposited ultra-thin aluminium oxide is investigated as a novel tunnel layer to form hole-selective contacts, where the thickness of aluminium oxide and its charge activation conditions are optimized. Stability of the ultra-thin aluminium oxide under illumination is also studied. Lastly, n-type silicon solar cells with passivated contacts using the optimized ultra-thin aluminium oxide as the tunnel layer are fabricated and an efficiency as high as 20.5% is achieved on a large cell area of 182 cm2.
URI: http://scholarbank.nus.edu.sg/handle/10635/150324
Appears in Collections:Ph.D Theses (Open)

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