Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/150319
DC FieldValue
dc.titleSURFACE ENGINEERING OF TWO-DIMENSIONAL TUNGSTEN DISELENIDE TOWARDS FUNCTIONAL ELECTRONIC AND OPTOELECTRONIC DEVICES
dc.contributor.authorLEI BO
dc.date.accessioned2018-12-31T18:00:51Z
dc.date.available2018-12-31T18:00:51Z
dc.date.issued2018-07-19
dc.identifier.citationLEI BO (2018-07-19). SURFACE ENGINEERING OF TWO-DIMENSIONAL TUNGSTEN DISELENIDE TOWARDS FUNCTIONAL ELECTRONIC AND OPTOELECTRONIC DEVICES. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/150319
dc.description.abstractFor the atomic thin of 2D WSe2, the surface and interface properties play a more important role in determining the electronic and optoelectronic properties of WSe2 than the bulk material. The study of the surface becomes one of the cornerstones in modern nanoelectronic industry. Investigation on the surface functionalization has made substantial progress and obtained great achievement over the past decades, promising to be an important field in the future. The aim of this thesis is to optimize the electronic and optoelectronic properties of 2D WSe2 with particular emphasis on the effect of surface functionalization on the 2D WSe2 based FETs and photodetectors.
dc.language.isoen
dc.subjectTungsten diselenide, surface functionalization, phototransistor, transistor, phase transition, defect
dc.typeThesis
dc.contributor.departmentPHYSICS
dc.contributor.supervisorCHEN WEI
dc.description.degreePh.D
dc.description.degreeconferredDOCTOR OF PHILOSOPHY
Appears in Collections:Ph.D Theses (Open)

Show simple item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
LeiBo.pdf30.76 MBAdobe PDF

OPEN

NoneView/Download

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.