Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/150319
Title: SURFACE ENGINEERING OF TWO-DIMENSIONAL TUNGSTEN DISELENIDE TOWARDS FUNCTIONAL ELECTRONIC AND OPTOELECTRONIC DEVICES
Authors: LEI BO
Keywords: Tungsten diselenide, surface functionalization, phototransistor, transistor, phase transition, defect
Issue Date: 19-Jul-2018
Citation: LEI BO (2018-07-19). SURFACE ENGINEERING OF TWO-DIMENSIONAL TUNGSTEN DISELENIDE TOWARDS FUNCTIONAL ELECTRONIC AND OPTOELECTRONIC DEVICES. ScholarBank@NUS Repository.
Abstract: For the atomic thin of 2D WSe2, the surface and interface properties play a more important role in determining the electronic and optoelectronic properties of WSe2 than the bulk material. The study of the surface becomes one of the cornerstones in modern nanoelectronic industry. Investigation on the surface functionalization has made substantial progress and obtained great achievement over the past decades, promising to be an important field in the future. The aim of this thesis is to optimize the electronic and optoelectronic properties of 2D WSe2 with particular emphasis on the effect of surface functionalization on the 2D WSe2 based FETs and photodetectors.
URI: http://scholarbank.nus.edu.sg/handle/10635/150319
Appears in Collections:Ph.D Theses (Open)

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