Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/150304
Title: MAGNETISM AND SPIN TRANSPORT AT THE INTERFACE OF FERROELECTRIC AND FERROMAGNETIC MATERIALS
Authors: ANDY PAUL CHEN
ORCID iD:   orcid.org/0000-0002-7441-1174
Keywords: Magnetism, thin films, material interfaces, multiferroic materials, first principles calculations, magnetic tunnel junctions
Issue Date: 3-Aug-2018
Citation: ANDY PAUL CHEN (2018-08-03). MAGNETISM AND SPIN TRANSPORT AT THE INTERFACE OF FERROELECTRIC AND FERROMAGNETIC MATERIALS. ScholarBank@NUS Repository.
Abstract: Recent advances in memory technology has been driven by emerging memory architectures, especially magnetic tunnel junctions. In this work, physical effects in fabrication and MTJ operation are explored by first principles calculations. We find that carbon dopant atoms form interstitial defects at the CoFe/MgO interface upon annealing although its impact on tunnelling magnetoresistance is lesser in comparison to boron. Using an interface model for CoxFe1-xMgO, we predicted that minimum magnetic damping happens at x = 35%, closer to observation than seen in earlier calculations. We determined that the strong perpendicular magnetisation of Pt/Fe2CoSi multilayers originates from orthorhombic distortion of Fe2CoSi and the formation of the Pt/Fe2CoSi interface. Lastly, we find that ferroelectric polarization control of magnetocrystalline anisotropy in CoFe/BaTiO3 is achieved through modulated orbital hybridization across the interface. Interestingly, a 5d metal capping layer is shown to change the magnetocrystalline anisotropy drastically and strengthen ferroelectric polarization control of magnetocrystalline anisotropy.
URI: http://scholarbank.nus.edu.sg/handle/10635/150304
Appears in Collections:Ph.D Theses (Open)

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