Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/150203
Title: OPTICAL AND OPTOELECTRONIC PROPERTIES OF 2D MATERIALS AND HETEROSTRUCTURES
Authors: WANG QIXING
ORCID iD:   orcid.org/0000-0003-0623-1910
Keywords: Optical, Optoelectronic, 2D materials, absorption, PL upconversion, electrostatic doping
Issue Date: 13-Aug-2018
Citation: WANG QIXING (2018-08-13). OPTICAL AND OPTOELECTRONIC PROPERTIES OF 2D MATERIALS AND HETEROSTRUCTURES. ScholarBank@NUS Repository.
Abstract: Two-dimensional (2D) materials show interesting electrical, optical, and optoelectronic properties. 2D material heterostructures hold some new properties not existing in a single 2D material. This thesis contains three interesting parts. In the first part, we use MoS2/BN/Au/SiO2 asymmetric Fabry-Perot cavity to enhance the absorption and to improve the optoelectronic device performance of monolayer MoS2. The maximum theoretical absorption of monolayer MoS2 at 532 nm is about 65.7% and photodiodes based on the cavity exhibit excellent current rectifying behavior, photo gain, and detectivity. In the second part, we investigate PL upconversion with an energy gain of 162 - 201 meV by defects in BN, which is attributed to one-photon and one-optical phonon absorption. Lastly, we tune the PL and Raman of MoS2/WS2 heterostructures by electrostatic doping. The out-of-plane Raman modes of both MoS2 and WS2 in the heterostructure become less sensitive to electron doping because of dielectric screening effect.
URI: http://scholarbank.nus.edu.sg/handle/10635/150203
Appears in Collections:Ph.D Theses (Open)

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