Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.ssi.2013.07.014
Title: SIMS of thin films grown by pulsed laser deposition on isotopically labeled substrates
Authors: Stender D.
Cook S. 
Kilner J.A.
D�beli M.
Conder K.
Lippert T.
Wokaun A.
Keywords: Oxygen ion diffusion
Pulsed laser deposition
Secondary ion mass spectrometry
Strontium titanate
Thin film
Yttria stabilized
zirconia
Issue Date: 2013
Publisher: Elsevier
Citation: Stender D., Cook S., Kilner J.A., D�beli M., Conder K., Lippert T., Wokaun A. (2013). SIMS of thin films grown by pulsed laser deposition on isotopically labeled substrates. Solid State Ionics 249-250 : 56-62. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ssi.2013.07.014
Abstract: The oxygen diffusion kinetics in a strontium titanate (STO)-yttria stabilized zirconia (YSZ) heterostructure were investigated by secondary ion mass spectrometry (SIMS) depth profiling of pulsed laser deposited thin films grown on 18O enriched single crystalline substrates. By annealing for 100 h at 1100 �C in an 18O enriched atmosphere 18O concentrations of ~ 81% and ~ 63% were reached in the YSZ, and STO substrates, respectively. The film depositions were performed at different substrate temperatures up to 750 �C and different oxygen background pressures in a range from 1.5 � 10- 5 mbar to 0.1 mbar to observe differences in the diffusion of the oxygen ions from the substrate into the films. Flat profiles of 18O were obtained for the YSZ thin films implying a very fast diffusion that determines the isotope distribution during the deposition. For the STO films pronounced concentration profiles were obtained at 650 �C allowing estimations of the diffusion constant. Elemental mapping of the YSZ films revealed pinholes of micron size which are hardly detectable by other techniques. � 2013 Elsevier B.V.
Source Title: Solid State Ionics
URI: http://scholarbank.nus.edu.sg/handle/10635/149258
ISSN: 1672738
DOI: 10.1016/j.ssi.2013.07.014
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