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Title: Design, simulation and fabrication of ultra thin fin for double gate MOSFETS
Keywords: FinFET, Tapering, PSM, Spacer Patterning, Taurus3D, Prolith3D
Issue Date: 4-May-2005
Citation: AGRAWAL NAVEEN (2005-05-04). Design, simulation and fabrication of ultra thin fin for double gate MOSFETS. ScholarBank@NUS Repository.
Abstract: Investigation of non-classical structures, especially double gate MOS devices a?? FinFET, has gained great importance as the physical dimension of conventional bulk MOSFET is inching closer to their physical limits, due to effective control of Short-Channel Effects and compatibility with bulk MOSFET fabrication. This work investigates the devicea??s 3D topological effect over FinFET performance and the technology developed to successfully and cost-effectively fabricate ultra thin silicon body structures - fins. Through modeling and simulation, using 3D device, process and lithography simulators, scaling issues and device performance of nanoscale FinFET transistor designs are evaluated. FinFETa??s 3D topology is optimized and a device design has been proposed which has superior performance over the conventional bulk device and also in comparison to what other research group have proposed on FinFET performance; specifically, the optimization of radius of curvature at the inlet and outlet of the fins has been done. A simple but production worthy technology is developed to fabricate the ultra thin single and multiple fins with good vertical profiles as required (and shown in simulation results) using new designs of masks incorporating Phase Shift Masking techniques (PSM) with deep UV 248nm lithography and UV 210 Shipley photoresist while having an inherently wider Source and Drain extension regions - tapering. Spacer patterning was tested initially to evaluate the spacer methods capability and FinFETa??s potential for further work.
Appears in Collections:Master's Theses (Open)

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