Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/145427
Title: SURFACE ENGINEERING OF TWO-DIMENSIONAL BLACK PHOSPHORUS TOWARDS ADVANCED ELECTRONIC AND OPTOELECTRONIC DEVICES
Authors: HU ZEHUA
ORCID iD:   orcid.org/0000-0002-1185-2992
Keywords: surface engineering, black phosphorus, oxidation mechanism, logic electronics, optoelectronics
Issue Date: 24-Apr-2018
Citation: HU ZEHUA (2018-04-24). SURFACE ENGINEERING OF TWO-DIMENSIONAL BLACK PHOSPHORUS TOWARDS ADVANCED ELECTRONIC AND OPTOELECTRONIC DEVICES. ScholarBank@NUS Repository.
Abstract: 2D black phosphorus (BP) have attracted increasing attention in the last few years owing to its intriguing semiconducting properties. However, two main problems strongly limit the application potential in complementary circuits, i.e. the poor air stability and the unbalanced ambipolar transport property. This thesis aims to utilize surface engineering method to 1) investigate the physical mechanism of such poor air stability and 2) control both electronic and optical properties of 2D BP. In the first part of this thesis, we systematically investigate the oxidation mechanism of BP by 1) demonstrating the physisorption nature of oxygen on BP and verifying the light-induced oxidation mechanism; 2) reporting a new degradation channel via water-catalyzed oxidation of BP in the dark. In the second part, we further use surface engineering method to functionalize BP towards advanced (opto)electronic devices. In situ surface modification of BP with potassium, the p-type dominated FET can be tuned to pure n-type with high electron mobility. High-performance complementary devices such as p-n homojunction and inverter have been demonstrated. Additionally, functionalization BP with silver nanoclusters induces new mid-gap states and activate a new transition route at near-infrared region, which enhance the photoresponsivity of near-infrared laser (808 nm) by ~30 times.
URI: http://scholarbank.nus.edu.sg/handle/10635/145427
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