Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/14274
Title: | In-situ growth and characterization of epitaxial NI films on MGO substrates | Authors: | YU JINHUA | Keywords: | hcp, fcc, structure transformation, V-M growth mode, uniaxial magnetic anisotropy, activation energy | Issue Date: | 19-Oct-2004 | Citation: | YU JINHUA (2004-10-19). In-situ growth and characterization of epitaxial NI films on MGO substrates. ScholarBank@NUS Repository. | Abstract: | Epitaxial metal: insulator interfaces are of growing interest, and their application concerns many different industrial sectors, including thin film growth, electronic and opto-electronic devices. In the present work, Ni was deposited on the (001) MgO surface in an ultra-high vacuum in-situ transmission electron microscope. The films were grown by electron beam evaporation between 25i??C and 600i??C. A novel pseudomorphically strained hcp phase, and an fcc phase was observed in the earliest stages of growth, followed by a structural transformation to an entirely fcc phase of [100] or [110] orientation. In this thesis, we discuss the morphology and the orientations of the fcc phase as a function of film thickness and growth temperature. The activation energy for surface diffusion of Ni on MgO(100) was determined to be ~0.6eV. A novel uniaxial magnetic anisotropy was detected upon in-situ annealing of our films, and the magnetic properties of the film was studied. | URI: | http://scholarbank.nus.edu.sg/handle/10635/14274 |
Appears in Collections: | Master's Theses (Open) |
Show full item record
Files in This Item:
File | Description | Size | Format | Access Settings | Version | |
---|---|---|---|---|---|---|
YuJH.pdf | 3.46 MB | Adobe PDF | OPEN | None | View/Download |
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.