Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/14274
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dc.titleIn-situ growth and characterization of epitaxial NI films on MGO substrates
dc.contributor.authorYU JINHUA
dc.date.accessioned2010-04-08T10:41:32Z
dc.date.available2010-04-08T10:41:32Z
dc.date.issued2004-10-19
dc.identifier.citationYU JINHUA (2004-10-19). In-situ growth and characterization of epitaxial NI films on MGO substrates. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/14274
dc.description.abstractEpitaxial metal: insulator interfaces are of growing interest, and their application concerns many different industrial sectors, including thin film growth, electronic and opto-electronic devices. In the present work, Ni was deposited on the (001) MgO surface in an ultra-high vacuum in-situ transmission electron microscope. The films were grown by electron beam evaporation between 25i??C and 600i??C. A novel pseudomorphically strained hcp phase, and an fcc phase was observed in the earliest stages of growth, followed by a structural transformation to an entirely fcc phase of [100] or [110] orientation. In this thesis, we discuss the morphology and the orientations of the fcc phase as a function of film thickness and growth temperature. The activation energy for surface diffusion of Ni on MgO(100) was determined to be ~0.6eV. A novel uniaxial magnetic anisotropy was detected upon in-situ annealing of our films, and the magnetic properties of the film was studied.
dc.language.isoen
dc.subjecthcp, fcc, structure transformation, V-M growth mode, uniaxial magnetic anisotropy, activation energy
dc.typeThesis
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.supervisorYEADON MARK
dc.description.degreeMaster's
dc.description.degreeconferredMASTER OF SCIENCE
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Master's Theses (Open)

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