Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/14088
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dc.titleEffects of Cu:Al ratios and SiO2 substrates on PE-MOCVD copper aluminium oxide semiconductor thin films
dc.contributor.authorCAI JIANLING
dc.date.accessioned2010-04-08T10:39:44Z
dc.date.available2010-04-08T10:39:44Z
dc.date.issued2004-08-20
dc.identifier.citationCAI JIANLING (2004-08-20). Effects of Cu:Al ratios and SiO2 substrates on PE-MOCVD copper aluminium oxide semiconductor thin films. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/14088
dc.description.abstractTransparent p-type Cu-Al-O thin films were prepared by plasma-enhanced metal-organic chemical vapor deposition technique. Cu-Al-O thin films were grown on za??cut single-crystal quartz, with the nominal Cu:Al ratios ranged from 1:1 to 6:1. It was observed that properties of the films, especially electrical conductivity and optical transmittance, were affected by the ratios of Cu:Al. The most conductive film, with a conductivity of 0.289 S cm-1 and a transmittance as high as 80%, was obtained with a nominal Cu:Al ratio of 1.5:1.It was observed that under a nominal Cu:Al ratio of 3:1, the crystalline films grown on single-crystal quartz were as conductive as 0.036 S cm-1. However, the amorphous or nanocrystal films grown on amorphous SiO2 substrates were insulators. It was also noted that the single-crystal quartz substrate was preferred for crystalline growth of films; while the amorphous or nanocrystal films were inclined to grow on amorphous SiO2 substrates.
dc.language.isoen
dc.subjectPE-MOCVD, Cu-Al-O, CuAlO2, Cu2O, Thin Film, P-type
dc.typeThesis
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.supervisorGONG HAO
dc.description.degreeMaster's
dc.description.degreeconferredMASTER OF SCIENCE
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Master's Theses (Open)

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