Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/14049
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dc.titleNumerical analysis of quantum dots nanostructures
dc.contributor.authorQUEK SIU SIN, JERRY
dc.date.accessioned2010-04-08T10:39:21Z
dc.date.available2010-04-08T10:39:21Z
dc.date.issued2004-06-10
dc.identifier.citationQUEK SIU SIN, JERRY (2004-06-10). Numerical analysis of quantum dots nanostructures. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/14049
dc.description.abstractQuantum dot nanostructures exhibit interesting optical and electronic properties that make them desirable for use in novel electro-optic devices. Fabricating these nanometer scaled structures proved to be a challenging task and one particularly successful method is by self-assembly. A finite element method is used to model the elastostatic fields in a quantum dot structure buried under a cap layer. The effects of elastic anisotropy and crystal orientation is considered and it is found that elastic anisotropy plays a crucial role in determining the vertical and spatial correlation in multiple layers of quantum dot heterostructures. The morphology of the flat wetting layer into a quantum dot island is also numerically simulated by using a mesh-free, moving least squares (MLS) interpolation technique together with the finite difference approach. The surface evolution obtained provided a greater insight to the shape, size, height, time required and spatial configuration of the quantum dot island.
dc.language.isoen
dc.subjectquantum dot; self assembly; finite element method; elastic anisotropy; morphology; moving least squares
dc.typeThesis
dc.contributor.departmentMECHANICAL ENGINEERING
dc.contributor.supervisorLIU GUI-RONG
dc.description.degreePh.D
dc.description.degreeconferredDOCTOR OF PHILOSOPHY
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Ph.D Theses (Open)

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