Please use this identifier to cite or link to this item:
Title: Structural and mechanism studies of laser induced titanium disilicide
Keywords: structural study, C40 TiSi2, thickness effect, transition temperature, laser annealing, Raman scattering.
Issue Date: 17-Dec-2003
Citation: TAN SWEE CHING (2003-12-17). Structural and mechanism studies of laser induced titanium disilicide. ScholarBank@NUS Repository.
Abstract: Titanium disilicide (TiSi2) is widely used as a low resistivity contacts in CMOS devices. TiSi2 may exist as an orthorhombic base-centered (C49) phase, or as the orthorhombic face-centered (C54) phase. Experimentally, the high resistivity C49 TiSi2 forms first on heating Ti on Si above 600 i??C and additional heating above 780 i??C is needed to transform C49 into the low resistivity C54 TiSi2. In my project, we report on the synthesis of a third phase of TiSi2, C40 TiSi2, with Excimer and Q-switched Nd:YAG laser irradiation. We are the first group in the world to obtain the structure of this C40 TiSi2 with GAXRD. Both GAXRD and Raman study unambiguously demonstrate that the laser-induced C40 TiSi2 can directly transform to the C54 TiSi2, bypassing the C49 TiSi2 at a relatively low temperature. In addition, the thickness effect of C40 TiSi2 on its transformation to C54 TiSi2 was also studied.
Appears in Collections:Master's Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
TanSC.pdf2.44 MBAdobe PDF



Page view(s)

checked on Apr 20, 2019


checked on Apr 20, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.