Please use this identifier to cite or link to this item:
|Title:||N-POLAR III-NITRIDE: MOCVD GROWTH, CHARACTERIZATIONS, AND DEVICES||Authors:||LI CHENGGUO||Keywords:||N-polarity, III-nitride, MOCVD||Issue Date:||18-Aug-2016||Citation:||LI CHENGGUO (2016-08-18). N-POLAR III-NITRIDE: MOCVD GROWTH, CHARACTERIZATIONS, AND DEVICES. ScholarBank@NUS Repository.||Abstract:||N-polar III-nitrides have received considerable attention to their potentials to boost the performances of light emitting diodes and high electron mobility transistors. However, owing to the poorer material qualities of N-polar III-nitride films, the performance of N-polar devices is still inferior to that of the current Ga-polar technology. This thesis contributes an effort in the epitaxial growth, characterizations and a device application of N-polar III-nitride materials. In particular, it investigates (1) a control of buffer polarity in the growth of N-polar films on sapphire substrates, (2) the anisotropic material properties of N-polar films grown on offcut substrates, (3) the material quality improvement of N-polar InGaN/GaN quantum wells using a flow-modulation method, and (4) a theoretical study of an application of N-polar materials in a novel light emitting diode structure.||URI:||http://scholarbank.nus.edu.sg/handle/10635/134351|
|Appears in Collections:||Ph.D Theses (Open)|
Show full item record
Files in This Item:
|CgLi_PhD_thesis.pdf||6.45 MB||Adobe PDF|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.