Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/132152
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dc.titleELECTRONIC AND OPTOELECTRONIC PROPERTIES OF TWO-DIMENSIONAL TRANSITION METAL DICHALCOGENIDES AND THEIR HETEROSTRUCTURES
dc.contributor.authorWANG SHUNFENG
dc.date.accessioned2016-11-30T18:01:19Z
dc.date.available2016-11-30T18:01:19Z
dc.date.issued2016-08-10
dc.identifier.citationWANG SHUNFENG (2016-08-10). ELECTRONIC AND OPTOELECTRONIC PROPERTIES OF TWO-DIMENSIONAL TRANSITION METAL DICHALCOGENIDES AND THEIR HETEROSTRUCTURES. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/132152
dc.description.abstractLayered transition metal dichalcogenides are a category of semiconductor with layer-dependent electronic structures in the two dimensional limit. We first investigated the effect of air to the performance of WSe2 transistors and explored the feasibility of efficient P-doping by the adsorption of ozone. The layer-dependent band structures together with the diversity of different chalcogenides provide more possibility to create structures with desirable properties by hetero-stacking. In our work, we took advantage of type II band alignment between MoS2 and WSe2 and fabricated heterojunctions showing excellent rectification and solar energy conversion efficiency. Given the remarkable excitonic effects in monolayers, we further designed a light emitting WS2/BN/Graphite hetero-structure with high quantum efficiency, where the injection of carriers are realized by tunneling. Our results support that two dimensional TMDs are of great potential for future electronics and optoelectronics.
dc.language.isoen
dc.subjectTransition metal dichalcogenides, Heterostructures, Electroluminescence
dc.typeThesis
dc.contributor.departmentPHYSICS
dc.contributor.supervisorEDA, GOKI
dc.description.degreePh.D
dc.description.degreeconferredDOCTOR OF PHILOSOPHY
dc.identifier.isiutNOT_IN_WOS
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