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|Title:||Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD||Authors:||Sun, W.H.
|Issue Date:||2003||Citation:||Sun, W.H., Chen, J.L., Wang, L.S., Chua, S.J. (2003). Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD. Materials Research Society Symposium - Proceedings 798 : 387-390. ScholarBank@NUS Repository.||Abstract:||AlN self-assembled quantum dots (QDs) with high density of ∼4.4×10 10/cm 2 on Si(111) substrates have been grown by low-pressure chemical vapor deposition under a very low V/III ratio of 350. We found that using AlN-QD/AlN buffer two-inch GaN epilayers without cracks were grown, indicating the underlying quantum dots play a crucial role in relaxing the stain of GaN epilayer. The quality and morphology were investigated by atom force microscopy, transmission electron microscopy, X-ray diffraction and optical microscope.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/131604||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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