Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges

Abstract

This thesis studies the bandstructure and transport physics in Si and Ge ultra-thin-body MOSFET with various surface orientations. Bandstructure calculation are done using conventional effective mass approach, empirical pseudopotential and the density functional theory. Transport in the dissipative regime uses Boltzmann equation and mobility for these devices are calculated. For quantum transport, we explored various formalism from non-equilibrium Green function, scattering matrix, finite difference versus finite element approaches. We compute the ballistic limits of these devices.