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Title: Advanced process/equipment control for thermal processing in lithography
Keywords: process control, lithography, temperature, uniformity
Issue Date: 23-Jan-2008
Citation: WU XIAODONG (2008-01-23). Advanced process/equipment control for thermal processing in lithography. ScholarBank@NUS Repository.
Abstract: Lithography is the key technology driver and "bottleneck" controlling the device scaling, circuit performance and magnitude of integration for silicon semiconductors. Critical dimension (CD) or linewidth is one the most critical variable in the lithography process. One important source of CD variation comes from variations in photoresist properties. Using a spectrometer, a multi-zone bakeplate and PI control algorithms, temperature distribution of a bakeplate is manipulated in real-time to reduce the variation of extinction coefficient within wafer and from wafer to wafer. An in-situ photoresist monitoring system is also proposed and developed to acquire photoresist thickness contour on the wafer.The temperature non-uniformity in post-exposure bake (PEB) process also contributes to the final variation in CD. A design of integrated bake/chill module for photoresist processing is then presented in the thesis. The feasibility of the proposed approach is demonstrated via detailed modeling and simulations based on first principle heat transfer analysis.
Appears in Collections:Ph.D Theses (Open)

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