Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2437056
Title: Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
Authors: Soh, C.B.
Hartono, H. 
Chow, S.Y.
Chua, S.J. 
Fitzgerald, E.A.
Issue Date: 2007
Citation: Soh, C.B., Hartono, H., Chow, S.Y., Chua, S.J., Fitzgerald, E.A. (2007). Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth. Applied Physics Letters 90 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2437056
Abstract: Nanoporous GaN template has been fabricated by electrochemical etching to give hexagonal pits with nanoscale pores of size 20-50 nm in the underlying grains. The effect of GaN buffer layer grown at various temperatures from 650 to 1015 °C on these as-fabricated nanopores templates is investigated by transmission electron microscopy. The buffer layer grown at the optimized temperature of 850 °C partially fill up the pores and voids with annihilation of threading dislocations, serving as an excellent template for high-quality GaN growth. This phenomenon is, however, not observed for the samples grown with other temperature buffer layers. Micro-Raman measurements show significant strain relaxation and improvement in the crystal quality of the overgrown GaN layer on nanoporous GaN template as compared to overgrown on conventional GaN template. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/129639
ISSN: 00036951
DOI: 10.1063/1.2437056
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