Please use this identifier to cite or link to this item:
Title: Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
Authors: Soh, C.B.
Hartono, H. 
Chow, S.Y.
Chua, S.J. 
Fitzgerald, E.A.
Issue Date: 2007
Citation: Soh, C.B., Hartono, H., Chow, S.Y., Chua, S.J., Fitzgerald, E.A. (2007). Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth. Applied Physics Letters 90 (5) : -. ScholarBank@NUS Repository.
Abstract: Nanoporous GaN template has been fabricated by electrochemical etching to give hexagonal pits with nanoscale pores of size 20-50 nm in the underlying grains. The effect of GaN buffer layer grown at various temperatures from 650 to 1015 °C on these as-fabricated nanopores templates is investigated by transmission electron microscopy. The buffer layer grown at the optimized temperature of 850 °C partially fill up the pores and voids with annihilation of threading dislocations, serving as an excellent template for high-quality GaN growth. This phenomenon is, however, not observed for the samples grown with other temperature buffer layers. Micro-Raman measurements show significant strain relaxation and improvement in the crystal quality of the overgrown GaN layer on nanoporous GaN template as compared to overgrown on conventional GaN template. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.2437056
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Sep 27, 2022


checked on Sep 27, 2022

Page view(s)

checked on Sep 22, 2022

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.