Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2013.6744408
Title: On the use of local ideality factor obtained from effective carrier lifetime measurements
Authors: Hameiri, Z. 
McIntosh, K.R.
Keywords: Charge carrier density
Charge carrier lifetime
Photoluminescence
Photovoltaic cells
Issue Date: 2013
Citation: Hameiri, Z.,McIntosh, K.R. (2013). On the use of local ideality factor obtained from effective carrier lifetime measurements. Conference Record of the IEEE Photovoltaic Specialists Conference : 1412-1416. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6744408
Abstract: Assessing the local ideality factor m is a useful approach to identify performance-limiting mechanisms in solar cells. Typically, m is extracted from the current-voltage curve of a completed solar cell and plotted as a function of voltage. In this study, m is extracted from photoluminescence measurements of the effective carrier lifetime and plotted against the minority carrier concentration Δn or the implied open-circuit voltage Voc i. It is shown that a plot of m(Δn) [or m(Voc i)] is a powerful way to analyze recombination processes within a silicon wafer, where its main advantage is that it can be determined from wafers that have neither metal contacts nor a p-n junction. © 2013 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/128898
ISBN: 9781479932993
ISSN: 01608371
DOI: 10.1109/PVSC.2013.6744408
Appears in Collections:Staff Publications

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