Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2013.6744408
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dc.titleOn the use of local ideality factor obtained from effective carrier lifetime measurements
dc.contributor.authorHameiri, Z.
dc.contributor.authorMcIntosh, K.R.
dc.date.accessioned2016-10-22T07:45:36Z
dc.date.available2016-10-22T07:45:36Z
dc.date.issued2013
dc.identifier.citationHameiri, Z.,McIntosh, K.R. (2013). On the use of local ideality factor obtained from effective carrier lifetime measurements. Conference Record of the IEEE Photovoltaic Specialists Conference : 1412-1416. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/PVSC.2013.6744408" target="_blank">https://doi.org/10.1109/PVSC.2013.6744408</a>
dc.identifier.isbn9781479932993
dc.identifier.issn01608371
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/128898
dc.description.abstractAssessing the local ideality factor m is a useful approach to identify performance-limiting mechanisms in solar cells. Typically, m is extracted from the current-voltage curve of a completed solar cell and plotted as a function of voltage. In this study, m is extracted from photoluminescence measurements of the effective carrier lifetime and plotted against the minority carrier concentration Δn or the implied open-circuit voltage Voc i. It is shown that a plot of m(Δn) [or m(Voc i)] is a powerful way to analyze recombination processes within a silicon wafer, where its main advantage is that it can be determined from wafers that have neither metal contacts nor a p-n junction. © 2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/PVSC.2013.6744408
dc.sourceScopus
dc.subjectCharge carrier density
dc.subjectCharge carrier lifetime
dc.subjectPhotoluminescence
dc.subjectPhotovoltaic cells
dc.typeConference Paper
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1109/PVSC.2013.6744408
dc.description.sourcetitleConference Record of the IEEE Photovoltaic Specialists Conference
dc.description.page1412-1416
dc.description.codenCRCND
dc.identifier.isiutNOT_IN_WOS
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