One-dimensional semiconductor nanowires for future nano- scaled application

Abstract

There has been considerable interest in bottom-up integration of one-dimensional semiconductor nanowires for their applications. Among the attractive advantages of bottom-up grown semiconductor nanowires, the ability to control the chemical composition and doping level of semiconductor nanowires is a main feature for nanoscale device applications.In this thesis, 1 dimensional semiconductor nanowires grown via VLS mechanism are demonstrated. First, we developed a CMOS compatible aluminum (Al) catalyst for Si nanowire. The properties of nanowires grown by Al catalyst showed single crystalline Si with Al catalyst at tip of nanowires, implying that the nanowires are synthesized via VLS mechanism. Second, post-synthesis plasma doping was studied for nanowire. Since this method provides excellent controllability of doping level, it will significantly improve the quality of nanowire for doping method. Third, SiGe nanowires were studied. It is found that SiGe nanowires are sensitively dependent on various substrates. It is significantly affected by Ge (111) substrate for Ge concentration and growth rate. Lastly, transport properties of nanowire device are studied.