Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2013.2270346
Title: Uncertainty in photoconductance measurements of the emitter saturation current
Authors: Thomson, A.F.
Hameiri, Z. 
Grant, N.E.
Price, C.J.
Di, Y.
Spurgin, J.
Keywords: Photovoltaics
recombination
silicon
Issue Date: 2013
Citation: Thomson, A.F., Hameiri, Z., Grant, N.E., Price, C.J., Di, Y., Spurgin, J. (2013). Uncertainty in photoconductance measurements of the emitter saturation current. IEEE Journal of Photovoltaics 3 (4) : 1200-1207. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2013.2270346
Abstract: We determine uncertainty in photoconductance (PC) measurements of the emitter saturation current density (J 0e). A Monte Carlo method is used to calculate the impact of uncertainty from the input parameters including the test equipment calibration, the intrinsic-recombination model, and the measured sample's thickness, doping, and optics. The uncertainty in the measurement of J0e is calculated, where we find that the sensitivity to input uncertainty depends on the measurement mode, transient decay, or quasi-steady-state PC. For quasi-steady-state measurements, the uncertainty in J0e is largely affected by thickness and generation uncertainty. For transient measurements, thickness uncertainty dominates the uncertainty in J0e. The wafer doping and measured voltage data has little impact on the resultant J0e uncertainty. We find, in our case study, that measurements of J0e to be accurate within 3%-6% when using the transient mode, and 4%-7% using the quasi-steady-state mode. © 2011-2012 IEEE.
Source Title: IEEE Journal of Photovoltaics
URI: http://scholarbank.nus.edu.sg/handle/10635/128750
ISSN: 21563381
DOI: 10.1109/JPHOTOV.2013.2270346
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