Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2013.2284375
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dc.titleInterlaboratory study of eddy-current measurement of excess-carrier recombination lifetime
dc.contributor.authorBlum, A.L.
dc.contributor.authorSwirhun, J.S.
dc.contributor.authorSinton, R.A.
dc.contributor.authorYan, F.
dc.contributor.authorHerasimenka, S.
dc.contributor.authorRoth, T.
dc.contributor.authorLauer, K.
dc.contributor.authorHaunschild, J.
dc.contributor.authorLim, B.
dc.contributor.authorBothe, K.
dc.contributor.authorHameiri, Z.
dc.contributor.authorSeipel, B.
dc.contributor.authorXiong, R.
dc.contributor.authorDhamrin, M.
dc.contributor.authorMurphy, J.D.
dc.date.accessioned2016-10-19T08:44:40Z
dc.date.available2016-10-19T08:44:40Z
dc.date.issued2014-01
dc.identifier.citationBlum, A.L., Swirhun, J.S., Sinton, R.A., Yan, F., Herasimenka, S., Roth, T., Lauer, K., Haunschild, J., Lim, B., Bothe, K., Hameiri, Z., Seipel, B., Xiong, R., Dhamrin, M., Murphy, J.D. (2014-01). Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime. IEEE Journal of Photovoltaics 4 (1) : 525-531. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2013.2284375
dc.identifier.issn21563381
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/128744
dc.description.abstractExcess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter-and intralaboratory repeatability. This paper presents the results of an international interlaboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for the quasi-steady-state mode and ±8% for transient mode for wafer samples, and within ±4% for bulk samples. © 2011-2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/JPHOTOV.2013.2284375
dc.sourceScopus
dc.subjectCharge carrier lifetime
dc.subjecteddy currents
dc.subjectphotoconductivity
dc.subjectsilicon
dc.typeArticle
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1109/JPHOTOV.2013.2284375
dc.description.sourcetitleIEEE Journal of Photovoltaics
dc.description.volume4
dc.description.issue1
dc.description.page525-531
dc.identifier.isiut000329038800078
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