Please use this identifier to cite or link to this item:
https://doi.org/10.1109/JPHOTOV.2013.2284375
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dc.title | Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime | |
dc.contributor.author | Blum, A.L. | |
dc.contributor.author | Swirhun, J.S. | |
dc.contributor.author | Sinton, R.A. | |
dc.contributor.author | Yan, F. | |
dc.contributor.author | Herasimenka, S. | |
dc.contributor.author | Roth, T. | |
dc.contributor.author | Lauer, K. | |
dc.contributor.author | Haunschild, J. | |
dc.contributor.author | Lim, B. | |
dc.contributor.author | Bothe, K. | |
dc.contributor.author | Hameiri, Z. | |
dc.contributor.author | Seipel, B. | |
dc.contributor.author | Xiong, R. | |
dc.contributor.author | Dhamrin, M. | |
dc.contributor.author | Murphy, J.D. | |
dc.date.accessioned | 2016-10-19T08:44:40Z | |
dc.date.available | 2016-10-19T08:44:40Z | |
dc.date.issued | 2014-01 | |
dc.identifier.citation | Blum, A.L., Swirhun, J.S., Sinton, R.A., Yan, F., Herasimenka, S., Roth, T., Lauer, K., Haunschild, J., Lim, B., Bothe, K., Hameiri, Z., Seipel, B., Xiong, R., Dhamrin, M., Murphy, J.D. (2014-01). Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime. IEEE Journal of Photovoltaics 4 (1) : 525-531. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2013.2284375 | |
dc.identifier.issn | 21563381 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/128744 | |
dc.description.abstract | Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter-and intralaboratory repeatability. This paper presents the results of an international interlaboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for the quasi-steady-state mode and ±8% for transient mode for wafer samples, and within ±4% for bulk samples. © 2011-2012 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/JPHOTOV.2013.2284375 | |
dc.source | Scopus | |
dc.subject | Charge carrier lifetime | |
dc.subject | eddy currents | |
dc.subject | photoconductivity | |
dc.subject | silicon | |
dc.type | Article | |
dc.contributor.department | SOLAR ENERGY RESEARCH INST OF S'PORE | |
dc.description.doi | 10.1109/JPHOTOV.2013.2284375 | |
dc.description.sourcetitle | IEEE Journal of Photovoltaics | |
dc.description.volume | 4 | |
dc.description.issue | 1 | |
dc.description.page | 525-531 | |
dc.identifier.isiut | 000329038800078 | |
Appears in Collections: | Staff Publications |
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