Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2013.2284375
Title: Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime
Authors: Blum, A.L.
Swirhun, J.S.
Sinton, R.A.
Yan, F.
Herasimenka, S.
Roth, T.
Lauer, K.
Haunschild, J.
Lim, B.
Bothe, K.
Hameiri, Z. 
Seipel, B.
Xiong, R.
Dhamrin, M.
Murphy, J.D.
Keywords: Charge carrier lifetime
eddy currents
photoconductivity
silicon
Issue Date: Jan-2014
Citation: Blum, A.L., Swirhun, J.S., Sinton, R.A., Yan, F., Herasimenka, S., Roth, T., Lauer, K., Haunschild, J., Lim, B., Bothe, K., Hameiri, Z., Seipel, B., Xiong, R., Dhamrin, M., Murphy, J.D. (2014-01). Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime. IEEE Journal of Photovoltaics 4 (1) : 525-531. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2013.2284375
Abstract: Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter-and intralaboratory repeatability. This paper presents the results of an international interlaboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for the quasi-steady-state mode and ±8% for transient mode for wafer samples, and within ±4% for bulk samples. © 2011-2012 IEEE.
Source Title: IEEE Journal of Photovoltaics
URI: http://scholarbank.nus.edu.sg/handle/10635/128744
ISSN: 21563381
DOI: 10.1109/JPHOTOV.2013.2284375
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