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|Title:||Novel hybrid organic-inorganic spin-on resist for electron- or photon-based nanolithography with outstanding resistance to dry etching||Authors:||Zanchetta, E.
|Issue Date:||20-Nov-2013||Citation:||Zanchetta, E., Giustina, G.D., Grenci, G., Pozzato, A., Tormen, M., Brusatin, G. (2013-11-20). Novel hybrid organic-inorganic spin-on resist for electron- or photon-based nanolithography with outstanding resistance to dry etching. Advanced Materials 25 (43) : 6261-6265. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.201301555||Abstract:||A new spin-on alumina-based resist exhibits excellent performance in terms of both achievable lateral resolution and etch resistance in fluorine-based non-cryo-cooled dry etching processes. The resist has selectivity greater than 100:1 with respect to the underlying silicon during the etching process, patternability with various lithographic tools (UV, X-rays, electron beam, and nanoimprint lithography), and positive and negative tone behavior depending only on the developer chemistry. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Source Title:||Advanced Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/128534||ISSN:||09359648||DOI:||10.1002/adma.201301555|
|Appears in Collections:||Staff Publications|
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