Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4905175
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dc.titleNonlinear effects in defect production by atomic and molecular ion implantation
dc.contributor.authorDavid, C.
dc.contributor.authorVarghese, Anto C.
dc.contributor.authorDholakia, M.
dc.contributor.authorChandra, S.
dc.contributor.authorNair, K.G.M.
dc.contributor.authorPanigrahi, B.K.
dc.contributor.authorSanthana Raman, P.
dc.contributor.authorAmirthapandian, S.
dc.contributor.authorAmarendra, G.
dc.contributor.authorKennedy, J.
dc.date.accessioned2016-09-20T05:46:20Z
dc.date.available2016-09-20T05:46:20Z
dc.date.issued2015
dc.identifier.citationDavid, C., Varghese, Anto C., Dholakia, M., Chandra, S., Nair, K.G.M., Panigrahi, B.K., Santhana Raman, P., Amirthapandian, S., Amarendra, G., Kennedy, J. (2015). Nonlinear effects in defect production by atomic and molecular ion implantation. Journal of Applied Physics 117 (1). ScholarBank@NUS Repository. https://doi.org/10.1063/1.4905175
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/128148
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4905175
dc.publisherAmerican Institute of Physics Inc.
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4905175
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume117
dc.description.issue1
dc.identifier.isiut000347958600040
dc.published.statePublished
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