Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp511002b
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dc.titleDefect scaling with contact area in EGaIn-based junctions: Impact on quality, Joule heating, and apparent injection current
dc.contributor.authorJiang Le
dc.contributor.authorSangeeth C.S.S.
dc.contributor.authorWan Albert
dc.contributor.authorVilan Ayelet
dc.contributor.authorNijhuis Christian Albertus
dc.date.accessioned2016-09-09T01:00:46Z
dc.date.available2016-09-09T01:00:46Z
dc.date.issued2015
dc.identifier.citationJiang Le, Sangeeth C.S.S., Wan Albert, Vilan Ayelet, Nijhuis Christian Albertus (2015). Defect scaling with contact area in EGaIn-based junctions: Impact on quality, Joule heating, and apparent injection current. Journal of Physical Chemistry C 119 (2) : 960-969. ScholarBank@NUS Repository. https://doi.org/10.1021/jp511002b
dc.identifier.issn19327447
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/127557
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/jp511002b
dc.publisherAmerican Chemical Society
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1021/jp511002b
dc.description.sourcetitleJournal of Physical Chemistry C
dc.description.volume119
dc.description.issue2
dc.description.page960-969
dc.identifier.isiut000348094000011
dc.published.statepublished
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