Please use this identifier to cite or link to this item:
https://doi.org/10.1021/jp5104164
DC Field | Value | |
---|---|---|
dc.title | Electronic structures and transport properties of n-type-doped indium oxides | |
dc.contributor.author | Chen Zhangxian | |
dc.contributor.author | Huang Liang | |
dc.contributor.author | Zhang Qingfan | |
dc.contributor.author | Xi Yongjie | |
dc.contributor.author | Li Ran | |
dc.contributor.author | Li Wanchao | |
dc.contributor.author | Xu Guoqin | |
dc.contributor.author | Cheng Hansong | |
dc.date.accessioned | 2016-09-09T01:00:38Z | |
dc.date.available | 2016-09-09T01:00:38Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | Chen Zhangxian, Huang Liang, Zhang Qingfan, Xi Yongjie, Li Ran, Li Wanchao, Xu Guoqin, Cheng Hansong (2015). Electronic structures and transport properties of n-type-doped indium oxides. Journal of Physical Chemistry C 119 (9) : 4789-4795. ScholarBank@NUS Repository. https://doi.org/10.1021/jp5104164 | |
dc.identifier.issn | 19327447 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/127554 | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/jp5104164 | |
dc.publisher | American Chemical Society | |
dc.type | Article | |
dc.contributor.department | CHEMISTRY | |
dc.description.doi | 10.1021/jp5104164 | |
dc.description.sourcetitle | Journal of Physical Chemistry C | |
dc.description.volume | 119 | |
dc.description.issue | 9 | |
dc.description.page | 4789-4795 | |
dc.identifier.isiut | 000350840700038 | |
dc.published.state | published | |
dc.grant.id | 21233006 | |
dc.grant.id | 21473164 | |
dc.grant.fundingagency | NSFC, National University of Singapore | |
dc.grant.fundingagency | NSFC, National University of Singapore | |
dc.grant.fundingagency | NUS, National University of Singapore | |
Appears in Collections: | Staff Publications |
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