Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp5104164
Title: Electronic structures and transport properties of n-type-doped indium oxides
Authors: Chen Zhangxian 
Huang Liang 
Zhang Qingfan
Xi Yongjie
Li Ran
Li Wanchao 
Xu Guoqin 
Cheng Hansong
Issue Date: 2015
Publisher: American Chemical Society
Citation: Chen Zhangxian, Huang Liang, Zhang Qingfan, Xi Yongjie, Li Ran, Li Wanchao, Xu Guoqin, Cheng Hansong (2015). Electronic structures and transport properties of n-type-doped indium oxides. Journal of Physical Chemistry C 119 (9) : 4789-4795. ScholarBank@NUS Repository. https://doi.org/10.1021/jp5104164
Source Title: Journal of Physical Chemistry C
URI: http://scholarbank.nus.edu.sg/handle/10635/127554
ISSN: 19327447
DOI: 10.1021/jp5104164
Appears in Collections:Staff Publications

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