Please use this identifier to cite or link to this item: https://doi.org/10.1049/el.2012.0685
Title: 800nW 43nV/√Hz neural recording amplifier with enhanced noise efficiency factor
Authors: Liu, L.
Zou, X.
Goh, W.L.
Ramamoorthy, R. 
Dawe, G. 
Je, M.
Issue Date: 26-Apr-2012
Citation: Liu, L., Zou, X., Goh, W.L., Ramamoorthy, R., Dawe, G., Je, M. (2012-04-26). 800nW 43nV/√Hz neural recording amplifier with enhanced noise efficiency factor. Electronics Letters 48 (9) : 479-480. ScholarBank@NUS Repository. https://doi.org/10.1049/el.2012.0685
Abstract: Advances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800nA at 1V power supply. The measured thermal noise floor is 43nV/√Hz and the input-referred noise is 5.71 μ V rms when integrated from 1Hz to 50kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18m CMOS technology, occupying an area of 0.05mm 2. © 2012 The Institution of Engineering and Technology.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/125646
ISSN: 00135194
DOI: 10.1049/el.2012.0685
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