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|Title:||800nW 43nV/√Hz neural recording amplifier with enhanced noise efficiency factor||Authors:||Liu, L.
|Issue Date:||26-Apr-2012||Citation:||Liu, L., Zou, X., Goh, W.L., Ramamoorthy, R., Dawe, G., Je, M. (2012-04-26). 800nW 43nV/√Hz neural recording amplifier with enhanced noise efficiency factor. Electronics Letters 48 (9) : 479-480. ScholarBank@NUS Repository. https://doi.org/10.1049/el.2012.0685||Abstract:||Advances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800nA at 1V power supply. The measured thermal noise floor is 43nV/√Hz and the input-referred noise is 5.71 μ V rms when integrated from 1Hz to 50kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18m CMOS technology, occupying an area of 0.05mm 2. © 2012 The Institution of Engineering and Technology.||Source Title:||Electronics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/125646||ISSN:||00135194||DOI:||10.1049/el.2012.0685|
|Appears in Collections:||Staff Publications|
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