Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/119276
Title: Doping and its effect on ZnO properties
Authors: TANG JIE
Keywords: ZnO, doping, PLD, solution growth method, THz-TDS, p-type
Issue Date: 29-Sep-2014
Citation: TANG JIE (2014-09-29). Doping and its effect on ZnO properties. ScholarBank@NUS Repository.
Abstract: ZnO samples used in this thesis were fabricated by solution method using water bath (WB) and microwave heating (MVH) and by pulsed laser deposition (PLD). The PLD ZnO samples were n-type doped with Ga and the electron effective mass was measured for the first time as a function of doping concentration by combining THz-TDS and Hall measurement. It is also noticed that the electron mobility determined by THz-TDS can be 7 times greater than that obtained by Hall due to carrier localization. Comparison of ZnO grown by WB and MVH shows that MVH synthesized ZnO has less intrinsic doping/defects and more uniform distribution. It is found that to obtain reliable p-type doping with potassium (K), the amount of K interstitial, Ki and KZn-Ki complexes must be minimized by annealing above 700oC for 30 minutes to break down the complexes and drive out Ki and Hi which compensate the p-conductivity.
URI: http://scholarbank.nus.edu.sg/handle/10635/119276
Appears in Collections:Ph.D Theses (Open)

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