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dc.titleIntegration of Indium Gallium Nitride with Nanostructures on Silicon Substrates for Potential Photovoltaic Applications
dc.contributor.authorHO JIAN WEI
dc.identifier.citationHO JIAN WEI (2014-09-29). Integration of Indium Gallium Nitride with Nanostructures on Silicon Substrates for Potential Photovoltaic Applications. ScholarBank@NUS Repository.
dc.description.abstractInGaN nanostructures are proposed to be grown on Si substrates for photovoltaic applications by utilizing nanostructured growth templates. Through combinatory approaches based on nanoimprint lithography, uniform, highly-ordered, tunable aspect-ratio SiNy nanoporous and Si nanopillared templates were first fabricated on AlN/Si and Si substrates respectively. Preliminary MOCVD conditions for InGaN heteroepitaxy on bare AlN/Si were also established. Nano-selective-area-growth was subsequently performed on the nanoporous templates to achieve ordered InGaN nanopyramid arrays. Compared with control films, structural quality of nanopyramids is improved through dislocation filtering, confinement, and bending. The impact of growth temperature, pressure, duration and V/III ratio on In content x, morphological, structural and PL qualities were studied. Compared to control films, nanopyramids yielded higher x, lower average reflectance (< 9%) and a multi-fold increase in photoluminescence intensity with tunable emission from 3.05 eV to 1.93 eV. Lastly, functional InGaN/GaN MQW core-shell nanopyramid arrays were successfully grown crack-free unlike the control.
dc.subjectInGaN nanostructures, selective area heteroepitaxy, MOCVD, Si substrate, nanopatterning, photovoltaic
dc.contributor.departmentNUS GRAD SCH FOR INTEGRATIVE SCI & ENGG
dc.contributor.supervisorCHUA SOO JIN
dc.contributor.supervisorTAY AH ONG, ANDREW
dc.description.degreeconferredDOCTOR OF PHILOSOPHY
Appears in Collections:Ph.D Theses (Open)

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