Electronic properties and topological phases in graphene-based van der waals heterostructures

Abstract

Using first-principles calculations, we study electronic and topological properties in heterostructures consisting of graphene and several other 2D materials (BiTeI/graphene, Bi2Se3/graphene, graphene/graphene (i.e. bilayer graphene) and BN/graphene). We find topological phase transition either by decreasing the interlayer distance or by changing the stacking configuration of the heterostructures. Besides, the Fermi level and the metal-insulator-transition can be tuned by the interlayer distance. Our results provide a new way to control electronic properties of 2D materials and to realize multiple topological phases.